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Submilliwatt Operation of AlInGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate

Identifieur interne : 00E412 ( Main/Repository ); précédent : 00E411; suivant : 00E413

Submilliwatt Operation of AlInGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate

Auteurs : RBID : Pascal:02-0382611

Descripteurs français

Pascal (Inist)
- 8560J, 7350D, Etude expérimentale, Puits quantique semiconducteur, Semiconducteur III-V, Aluminium composé, Indium composé, Gallium composé, Azote composé, Diode électroluminescente, Conductivité électrique, Structure bande.

English descriptors

KwdEn :
- Aluminium compounds, Band structure, Electrical conductivity, Experimental study, Gallium compounds, III-V semiconductors, Indium compounds, Light emitting diodes, Nitrogen compounds, Semiconductor quantum wells.

Abstract

We report on sub-milliwatt operation of ultra-violet light emitting diodes on sapphire with a peak emission wavelength of 315 nm having quaternary AlInGaN multiple quantum well (MQW) active region. A significant increase in the device-emitted power was achieved using an interdigitated finger geometry design, which reduces the differential resistance and eliminates current crowding. The flip-chip mounting of the diced chips with sapphire substrates improves thermal management and increases the light extraction efficiency from the device active area. For 315 nm emission an optical power as high as 0.23 mW was obtained with 800 mA pulsed pumping current. © 2002 The Japan Society of Applied Physics

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<front><div type="abstract" xml:lang="en">We report on sub-milliwatt operation of ultra-violet light emitting diodes on sapphire with a peak emission wavelength of 315 nm having quaternary AlInGaN multiple quantum well (MQW) active region. A significant increase in the device-emitted power was achieved using an interdigitated finger geometry design, which reduces the differential resistance and eliminates current crowding. The flip-chip mounting of the diced chips with sapphire substrates improves thermal management and increases the light extraction efficiency from the device active area. For 315 nm emission an optical power as high as 0.23 mW was obtained with 800 mA pulsed pumping current. © 2002 The Japan Society of Applied Physics</div>
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Submilliwatt Operation of AlInGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate

Submilliwatt Operation of AlInGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate

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